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| SUD40N08-16 Vishay Siliconix N-Channel 80-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 80 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD40N08-16 SUD40N08-16--E3 (Lead Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 80 "20 40 30 60 40 40 80 136b 3a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t Junction-to-Case Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71323 S-40272--Rev. C, 23-Feb-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit _C/W C/W 1 SUD40N08-16 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VGS = 10 V, ID = 40 A, TJ = 125_C VGS = 10 V, ID = 40 A, TJ = 175_C VDS = 15 V, ID = 40 A 45 60 0.013 0.016 0.027 0.037 S W 80 2.0 4.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 40 V, RL = 1.0 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W 0.5 12 52 25 10 VDS = 40 V, VGS = 10 V, ID = 40 A , , VGS = 0 V, VDS = 25 V, F = 1 MHz 1960 370 200 42 7 13 2.7 20 80 38 15 ns W 60 nC pF Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 40 A, VGS = 0 V IF = 40 A, di/dt = 100 A/ms 1.0 45 60 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71323 S-40272--Rev. C, 23-Feb-04 SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 7 V 80 I D - Drain Current (A) I D - Drain Current (A) 80 100 Transfer Characteristics 60 6V 60 40 40 TC = 125_C 25_C -55_C 20 3, 4 V 5V 20 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) 60 25_C 0.03 0.04 On-Resistance vs. Drain Current 125_C 40 0.02 VGS = 10 V 20 0.01 0 0 20 40 60 80 100 0.00 0 20 40 60 80 100 ID - Drain Current (A) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Crss Coss ID - Drain Current (A) 20 VDS = 10 V ID = 40 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) 16 Ciss 12 8 4 0 0 15 30 45 60 75 Qg - Total Gate Charge (nC) Document Number: 71323 S-40272--Rev. C, 23-Feb-04 www.vishay.com 3 SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.4 2.0 rDS(on) - On-Resiistance (Normalized) 1.6 1.2 0.8 0.4 0.0 -50 VGS = 10 V ID = 40 A I S - Source Current (A) 10 TJ = 150_C 100 Source-Drain Diode Forward Voltage 1 TJ = 25_C 0.1 -25 0 25 50 75 100 125 150 175 0.01 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 1000 Safe Operating Area 40 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 ms 100 ms 30 10 1 ms 10 ms 1 TC = 25_C Single Pulse 100 ms 1 s, dc 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 Normalized Thermal Transient Impedance, Junction-to-Case 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 4 Document Number: 71323 S-40272--Rev. C, 23-Feb-04 |
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